AC2M1000170D

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Model
AC2M1000170D
Description
SiC MOS (Silicon Carbide)AC2M1000170D 1700V 4.9A
FET Type
N-Channel
Series
Silicon Carbide
DrainVoltage(Vdss)
1700V
Current
4.9A
Drive Voltage
20V
Vgs (Max)
+25V, -10V
Rds On
1000mΩ
Vgs(th)
4V
Gate Charge (Qg)
13 nC
Input Capacitance (Ciss)
191 pF
Power Dissipation
69W
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Package
TO-247-3