AC2M0280120D

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Model
AC2M0280120D
Description
SiC MOS (Silicon Carbide)AC2M0280120D 1200V 10A
FET Type
N-Channel
Series
Silicon Carbide
DrainVoltage(Vdss)
1200V
Current
10A
Drive Voltage
20V
Vgs (Max)
+25V, -10V
Rds On
280mΩ
Vgs(th)
2.8V
Gate Charge (Qg)
20.4 nC
Input Capacitance (Ciss)
259 pF
Power Dissipation
62.5W
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Package
TO-247-3