AC2M0025120D

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Model
AC2M0025120D
Description
SiC MOS (Silicon Carbide)AC2M0025120D 1200V 90A
FET Type
N-Channel
Series
Silicon Carbide
DrainVoltage(Vdss)
1200V
Current
90A
Drive Voltage
20V
Vgs (Max)
+25V, -10V
Rds On
25mΩ
Vgs(th)
2.4V
Gate Charge (Qg)
161 nC
Input Capacitance (Ciss)
2788 pF
Power Dissipation
463W
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Package
TO-247-3